Actively mode-locked dual-wavelength fiber laser with close wavelength spacing using a fiber Bragg grating

A simple actively mode-locked fiber ring laser is proposed and successfully demonstrated to generate dual-wavelength picosecond pulses with close wavelength spacing using one Bragg grating in standard single-mode fiber. The proposed laser can be made to operate in stable dual-wavelength at room temperature, due to the birefringence characteristic of the FBG induced by transverse strain. Transverse strain loading on the FBG allows the wavelength spacing to be controlled. Generation of stable dual-wavelength pulses with a pulsewidth of 212–234 ps and a tunable wavelength separation from 0.2 to 0.44 nm at a pulse rate of 1.05 GHz was demonstrated.     

A scheme for teleporting Schrdinger-cat states via the dispersive atom-cavity-field interaction

A proposal is presented for teleporting Schrding-cat states. The process of the teleportation is achieved through the dispersive atom-cavity-field interaction. In this proposal, only measurement on the cavity field and on the singlet atomic states are used.     

甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染     

Fourier regularization for a backward heat equation

In this paper a simple and convenient new regularization method for solving backward heat equation—Fourier regularization method is given. Meanwhile, some quite sharp error estimates between the approximate solution and exact solution are provided. A numerical example also shows that the method works effectively.     

Crystallographic report: Bis(norfloxacin)dilead(II) tetranitrate, [Pb2(H‐Norf)2(ONO2)4]

The centrosymmetric binuclear structure of [Pb₂(H‐Norf)₂(ONO₂)₄]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd.     

Synthesis of single crystalline layered lithium manganese oxide nanorods

Single-crystalline layered lithium manganese oxide nanorods were prepared via a low-temperature molten salt synthesis method. The material was investigated by a variety of techniques, including X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectrum (XPS).     

硫酰胺的快速分析（Ⅱ） 

硫酰胺生产过程中副产的大量氯化铵要干扰硫酰胺的测定，采用四苯硼钠将全部氯化铵呈沉淀析出，再用次溴酸钠把滤液中的硫酰胺分解成氮气，测其体积，计算出硫酰胺的含量。对样品进行测定的结果表明，该法重现性好、准确度高、分析周期在３５ｍｉｎ内，相对误差在±１％以内。     

Application of novel SIMS technique for imaging the active sites of oxygen reduction at the SOFC cathode/electrolyte interfaces

The oxygen reduction active sites were visualized around the O₂/SOFC cathode/electrolyte triple phase boundaries (TPB) by the¹⁶O/¹⁸O exchange techniques and secondary ion mass spectrometry (SIMS) analysis. The higher¹⁸O concentration is observed on the cathode top surfaces (La_0.9Sr_0.1MnO₃-mesh, Au-mesh, and Ag-porous), which suggested the promotion of oxygen adsorption and oxygen surface exchange at the cathode. The oxygen diffusion through the bulk of cathode occurred at the La_0.9Sr_0.1MnO₃-mesh and the Ag-porous cathodes, not at the Au-mesh cathode. On the YSZ surfaces after removing the cathode, the active sites for oxygen incorporation were analyzed by SIMS. The active sites for oxygen incorporation were at the La_0.9Sr_0.1MnO₃/YSZ interface as well as the TPB. On the other hand, the active sites for oxygen incorporation are limited to the TPB in the case of the Au-mesh removed YSZ surface. From the SIMS analysis, the expansion of the active sites for oxygen incorporation is less than a few μm from the TPB lines. Paper presented at the 8th EuroConference on Ionics, Carvoeiro, Algarve, Portugal, Sept. 16–22, 2001.     

过量Zn对β-Zn4Sb3热电性能影响的研究

采用真空熔融缓冷方法制备了单相β-Zn4Sb3以及含有过量Zn的β-Zn4Sb3块体热电材料.在300—700K的温度范围内测试了材料的电导率、Seebeck系数和热导率,研究了β-Zn4Sb3化合物中过量Zn的分布状态及其对材料热电性能的影响规律.结果表明：过量的Zn作为第二相较均匀的分布在β-Zn4Sb3的晶界上,随着Zn含量增加,材料电导率和热导率上升,Seebeck系数下降,Zn第二相的引入能有效提高材料的功率因子,Zn过量2at%的材料在700K时其ZT值达到1.10.